International Journal of Emerging Trends in Engineering and Development Issue 5, Vol. 4 (June.-July. 2015) Available online on http://www.rspublication.com/ijeted/ijeted_index.htm ISSN 2249-6149

نویسندگان

  • Dr.G.U. Kharat
  • Renuka Wekhande
چکیده

A compact wideband 2 -6GHz highly linear low noise amplifier is designed for Digital RF application. This design is implemented using MMIC using GaAs pseudomorphic high electron mobility transistors (pHEMTs). The proposed design is fundamentally designed for SDR and cognitive radio application. This LNA is implemented in 0.5um GaAs process and has a gain of 30dB at 2.45GHz and 23dB at 5GHz,Noise figure is less than 1.8dB over the band and an input third order intercept point (IIP3) is equal to +13 dBm at 5.5GHz. A supply voltage of 3 V and power consumption is 43 mW. Size of the LNA die is 800um x 871um. Index Terms — Common source (CS), low-noise amplifier (LNA), resistive shunt feedback, third-order input-referred intercept point ( IIP3), SDR,Digital RF,Cognitive Radio, wideband.

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تاریخ انتشار 2015